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Simulation of Power Devices with TCAD Sentaurus
A complete review of TCAD simulation of power devices from the latest trends to future outlook, including silicon-based, SiC & GaN power devices. (Japanese/English)
Ricardo Borges, Sr. Manager, TCAD Product Marketing, Synopsys
Jul 30, 2010

Simulation in Photovoltaics with TCAD Sentaurus and Saber
This webinar focuses on optimization of rear point contact solar cells using 3-D TCAD simulation and addresses system-level simulation of PV arrays
Joanne Huang, TCAD R&D Engineer & Kurt Mueller, Saber Business Development Manager, Synopsys
Jul 22, 2010

Introduction to TCAD Sentaurus: March 2010 Release
Introduction to the latest release of TCAD Sentaurus including new features and capabilities for addressing technologies such as CMOS, memory, power, analog/RF and optoelectronics.
Sudarshan Krishnamoorthy, Technical Marketing Manager, Synopsys; Christoph Zechner, R&D Manager, Synopsys; Nelson Braga, CAE Manager, Synopsys; Dmitri Matveev, R&D Engineer, Synopsys
Apr 27, 2010

3-D TCAD Simulation with Sentaurus
The latest algorithms and best practices for 3-D TCAD simulation to derive maximum benefit from the comprehensive 3-D capabilities in Sentaurus TCAD.
Sudarshan Krishnamoorthy, Technical Marketing Manager, Synopsys; Simeon Simeonov, Ph.D., R&D Manager, Synopsys
Feb 24, 2010

Simulation of Advanced Semiconductor Devices Including High-k/Metal-gate Transistors and FinFETs
This webinar discusses the application of TCAD to high-k/metal-gate transistors and 3-D modeling FinFET devices, focusing on the physical models and 3-D modeling techniques required to achieve successful simulations.
Synopsys
Dec 01, 2009

Introduction to TCAD Sentaurus New Release Features
This webinar unveils the new features in the Synopsys TCAD Sentaurus June 2009 release.
Synopsys
Jul 22, 2009

Simulation of Multi-Junction Solar Cells Using TCAD Sentaurus
This webinar addresses the design and optimization of multi-junction solar cells using Synopsys' TCAD Sentaurus tools.
Synopsys
Apr 15, 2009

Thermo Mechanical Finite Element Analysis of 3D Through-silicon Via (TSV) Structures
3-D integration, where multiple die are stacked and interconnected in the vertical dimension using through-silicon vias (TSVs), is considered by many to offer significant performance and cost benefits for key applications.
Synopsys
Feb 04, 2009

CMOS Flow from Process to Device to Yield Management with Process Compact Models (PCMs)
Yield and performance are the foremost concerns for device design in the semiconductor industry, and a clear understanding of their sensitivity to process parameters is key for better control.
Synopsys
Nov 22, 2008

Thin Film Solar Cell Simulation
Thin film solar cells are currently the focus of worldwide research and development efforts aimed at bringing to market more efficient and cost effective processes and designs.
Synopsys
Aug 20, 2008

Simulation of SiC Devices – Models and Techniques
Silicon carbide (SiC) has long been recognized as a promising semiconductor for power electronics in view of its superior material attributes, allowing the realization of higher blocking voltages and switching frequencies.
Synopsys
Jul 30, 2008

3D Process and Device Simulation - Practical Guidelines
The rising complexity in the processing steps and device structures of semiconductor technologies is leading to a corresponding rise in 3-D effects which must be analyzed with simulation.
Synopsys
Jun 28, 2008

Addressing the Challenges in EUV Lithography by Simulation
EUV lithography is considered the most viable solution for printing the critical features related to the 22nm technology node.
Synopsys
Jun 12, 2008

Modeling Non-volatile Memory Technologies with Sentaurus TCAD
A new generation of non-volatile memory devices have kept scientists and designers busy researching and optimizing designs like SONOS memory, new materials like chalcogenide (GST) for Phase Change Memory, or means to pump charge into Nano Crystals to store information.
Synopsys
May 29, 2008

Resist Modeling with Sentaurus Lithography
This webinar provides an introduction to lithography simulation and demonstrates the benefits of TCAD Sentaurus Lithography using application examples. With Sentaurus Lithography, advanced lithography process simulation joins the TCAD Sentaurus physics-oriented technology simulation product family.
Synopsys
Apr 24, 2008

Electromagnetic Simulation of Image Sensors: From Design to Manufacturability
In back end of line (BEoL) processing, high mechanical stresses and large stress gradients in local regions of interconnect structures can lead to yield loss and reliability failures.
Synopsys
Mar 20, 2008

Gallium Nitride HFETs: Physical Models and Simulations for RF and Power Applications
Simulation of GaN HFET devices using TCAD Sentaurus device
Synopsys
Feb 21, 2008

Process and Stress Simulation for BEoL Reliability and Mobility Enhancement
In back end of line (BEoL) processing, high mechanical stresses and large stress gradients in local regions of interconnect structures can lead to yield loss and reliability failures.
Synopsys
Jan 31, 2008